Click to expand full text
DBES105a
Flip-Chip Dual Diode
GaAs Diode Description
The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications.
Main Features
■ High cut-off frequencies : 3THz ■ High breakdown voltage : < -5V @ 20µA ■ Good ideality factor : 1.2 ■ Low parasitic inductances ■ Low cost technology ■ Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol
Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage
Parameter
Typ
5 3 1.2 < -5
Unit
µm THz
V
ESD Protection : Electrostatic discharge sensitive device.
DBES105A Datasheet
