DBES105A
Overview
- High cut-off frequencies : 3THz
- High breakdown voltage : < -5V @ 20µA
- Good ideality factor : 1.2
- Low parasitic inductances
- Low cost technology
- Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco
- BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 < -5 Unit µm THz V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSDBES1051067 -08-Mar-01 1/4
