Description
The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology.
Features
- High cut-off frequencies : 3THz.
- High breakdown voltage : < -5V @ 20µA.
- Good ideality factor : 1.2.
- Low parasitic inductances.
- Low cost technology.
- Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°C
Symbol
Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage
Parameter
Typ
5 3 1.2 < -5
Unit
µm THz
V
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSDBES1051.
DBES105A_UnitedMonolithicSemiconductors.pdf
