* High cut-off frequencies : 3THz
* High breakdown voltage : < -5V @ 20µA
* Good ideality factor : 1.2
* Low parasitic inductances
* Low cost technolo.

Main Features
* High cut-off frequencies : 3THz
* High breakdown voltage : < -5V @ 20µA
* Good ideality fa.

The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high perfo.

DBE0209

DBE0640

DB-2933-54

DB-3

DB-4

DB-499D-470

DB-54003-470

DB-54003L-175

DB-54003L-175A

DB-54003L-470

DB-54003L-512

DB-54003L-880

DB-54003L-930