• Part: DBES105A
  • Description: Flip-Chip Dual Diode
  • Manufacturer: United Monolithic Semiconductors
  • Size: 58.66 KB
Download DBES105A Datasheet PDF
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Datasheet Summary

Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for high performance mixer applications. Main Features - High cut-off frequencies : 3THz - High breakdown voltage : < -5V @ 20µA - Good ideality factor : 1.2 - Low parasitic inductances - Low cost technology - Dimensions : 0.53 x 0.23 x 0.1mm Main Characteristics Tamb. = 25°C Symbol Wu Fco n BVak Gate Width Cut-off frequency Ideality factor Anode-cathode break-down voltage Parameter Typ 5 3 1.2 <...